Diffusion area

The diffusion area includes three horizontal furnaces for atmospheric pressure and low-pressure processes such as oxidation, diffusion, annealing, silicon nitride deposition, poly-Si deposition and TEOS, and BPSG deposition. These operations require utility systems to ensure proper operation of the furnaces such as the installation of the gas management system, vacuum system and extraction system (Exhaust).

Possible services in the Diffusion area:

  • Oxidation (Dry and wet)
  • Annealing in temperature ranging from 350 to 900C°.
  • High-temperature annealing 1150 C°
  • LPCVD deposition of Poly-Silicon, Silicon nitride, TEOS and BPSG)
  • CVD Deposition of POCL3 (Doping Poly-Silicon)

Heat treatment and high-temperature annealing

Heat treatment operations on silicon substrates are carried out in furnaces that allow:

  • The growth of silicon dioxide (SiO2)
  • Diffusion of dopants in silicon (Well drive or Drive in)
  • Heating and redistribution

All these operations are carried out on an atmospheric process, in the presence of nitrogen (N2) flow.

Oxidation (Dry and wet)

Silicon oxide growth is obtained by the reaction of oxidizing species on the surface of silicon (O2 or H2) at high temperatures (800°C to 960°C) and at atmospheric pressure.
The table below shows the different types of oxides produced at the technology center:

Process Layers Thickness
Wet Oxidation Thick (0.1-0.8 μm)
Dry Oxidation Thin (10-25 nm)

LPCVD depots 

The table below shows the steps of the process performed in the diffusion area. The mentioned thicknesses are recommended for an optimized process.

Process Thickness
LPCVD nitride (150-300nm)
LPCVD TEOS (30- 100- 300 nm)
LPCVD BPSG (700nm)
Poly-Silicon (300-500nm)