Ion implantation area A medium-current ionic implanter is used to introduce dopants into a platelet. Equipment available in the ion implantation area VARIAN E220 Ion Implanter Species: B+(BF3), P+(PH3), As+(AsH3) and Ar. Dose range: from 2.0e12 to 5.0e15 ion/cm2. Energy range: 15 to 200 KeV. Incidence angle: standard 7°. Diamond of the insert: 150 mm Possible services in the ion implantation area Doping of wafers (silicon) with two types of dopants: type P and type N. Amorphisation of crystalline structures (creation of defects in the structure).