Plasma deposition area

The purpose of the plasma deposition area in the CMOS technological manufacturing process is to make contacts and interconnections (metal layers) between the different parts of the circuit being manufactured, as well as to make intermetallic dielectric layers in the case of several metal levels, or for protection (passivation layers).

Equipment available in the deposition area

The DC sprayer: MRC 643

This equipment is used for the deposition of thin metal layers by PVD (a physical deposition method), among these layers are the titanium layer (Ti), the titanium nitride layer (TiN) and the aluminium layer (AlCu ; 0.5% Cu)

Depot equipment: TRIKON DETLA 201

This equipment is used for the deposition of dielectric thin films by PECVD (a chemical deposition method)

The two layers deposited by this technique are:

• The silicon oxide layer (SiO2)
• and the silicon nitride layer (Si3N4)

Possible services in the depot area

* Recommended thicknesses in the CMOS 1µm process.

** Thicknesses deposited for recipe optimization.
According to the specifications of the two equipment, nothing is mentioned on the limits of the deposit thicknesses to be deposited