Plasma etching area Dry plasma etching uses gas phase etching agents in a low-pressure plasma. It allows directional etching without using the crystal orientation of the substrate or the layer to be etched. Equipment available in the dry etching area The dry etching area consists of four (4) equipments: Metal etching equipment (Al, Ti, TiN,…etc.) Authorized materials: Al, Al2O3, TiO2, poly-Si, Nb, Cr, Cr, W and a variety of nitrides can be etched using Cl Prohibited materials: Non-compatible materials IC silicon Poly etching equipment (poly-silicon, silicon nitride Si3N4) Authorized materials: Silicon nitride, poly-silicon, TiW,…etc. Prohibited materials: Non-compatible materials IC silicon Oxide etching equipment (SiO2, SiOx) Authorized materials: silicon, quartz Prohibited materials: Non-compatible materials IC silicon Resin etching equipment Authorized materials: Organic materials Prohibited materials: Non-compatible materials IC silicon Possible services in the dry etching area The equipment is capable of etching materials reacting with fluorinated gases (sulphur hexafluoride (SF6), carbon tetrafluoride (CF4)), chlorinated (Cl2 chloride, boron trichloride (BCl3)) or hydrogen bromide (HBr).