Abstract; In this letter, a new design method of ultra wideband bandpass filter (UWB BPF) is proposed. Based on a symmetrical structure of a simple uniform line loaded by a stepped-impedance open stub (SIS) connected at its center, the proposed design method employs simultaneously the optimization of a defined objective function in the range of […]
October 16, 2019 Rachid SIKADOUR 2015, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division Bandpass filter (BPF), compact, stepped-impedance stub
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Abstract; A new approach is proposed to act as an efficient design technique for the implementation of ultra-wideband (UWB) bandpass filters in integrated passive device technology. The proposed design is based on two major original contributions. First, the use of hourglass filter theory which, to the best of authors knowledge, has not been applied yet […]
October 16, 2019 Rachid SIKADOUR 2015, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division band-pass filters, CMOS integrated circuits, ultra wideband technology
Abstract; In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap (Nbt) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Border-trap, charge pumping, Vertical distribution
Abstract; This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degradation is less important when the magnetic field is applied. The dynamic of the degradation change and […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic field, NBTI, VDMOSFET
Abstract; In this paper, we model the geometric component in a charge pumping (CP) technique of polycrystalline silicon thin-film transistors (poly-Si TFTs). This model is based on both remaining carrier types when the device transits from accumulation to inversion and vice versa. Therefore, it depends on gate length (L) and width (W) as well as […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Logic gates, MOSFET, Thin film transistors
Abstract; In this paper, we model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have established an analytic equation for charge-pumping current. This equation seems to be a universal one since it is in agreement with CP experimental data of different technologies devices. Instead of the classical considerations regarding […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Logic gates, Mathematical model, MOSFET
Abstract; The electromechanical response of a chemical gas sensor based on a TFBAR (Thin Film Bulk Acoustic Resonator) structure coated with a sensitive polymer layer was simulated with a FEM (Finite Elements Method) software (COMSOL Multiphysics®). The principle of sensing is based on the change of the mechanical properties of the polymer due to the […]
October 16, 2019 Rachid SIKADOUR 2015, Micro-Electro-Mechanical Systems and Sensors Team, Microelectronic & Nanotechnologie Division Gas Sensor, TFBAR, ZnO