Abstract; This work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances (Rg, Rs, Rd), the intrinsic conductances (gm, gd), and the input capacitance Cgg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division equivalent circui, extraction method, toff frequency
READ MORE
Abstract; To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division extraction method, GaN HEMT, small‐signal modeling
Abstract; In this paper, a set of ultra-compact CMOS bandpass filters are proposed for ultra-wideband (UWB) applications. For this aim, a comparative study was first performed enabling to deduce that Chebyshev-inverse and Hourglass filtering functions can be the most suitable for UWB operation. The impact of the latter functions on the easiness of implementation in […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division band-pass filters, Chebyshev filters, integrated circuit design
Abstract; This study presents a new design of compact transimpedance amplifier (TIA) for optical communication applications. By adopting the regulated common gate (RCG) topology, the proposed amplifier is designed and synthesised based on a thirdorder elliptic filter approach. Implemented in 0.13 μm complementary metal oxide semiconductor technology, the post layout simulation results provide 50 dB […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division CMOS analogue integrated circuits, integrated circuit layout, telecommunication network topology
French
English
Arabic