Abstract; The design of an interface to a specific sensor induces costs and design time mainly related to the analog part. So to reduce these costs, it should have been standardized like digital electronics. The aim of the present work is the elaboration of a method based on multiobjectives genetic algorithms (MOGAs) to allow automated […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team
READ MORE
Abstract; By extracting and eliminating the geometric component from the charge pumping current (ICP) in on-the-fly oxide trap method (OTFOT), we have been able to demonstrate that both interface (ΔNit) and deep hole oxide traps (ΔNotD) induced by the negative bias temperature instability (NBTI) are principally located in the lightly doped drain region (LDD region) […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping current, LDD region, OTFOT
Abstract; The Negative bias temperature instability (NBTI) is one of the most important reliability issues for modern CMOS technology. Accurate reliability prediction necessitates physically based models for NBTI and accurate methods for estimation of interface (∆N it ) and oxide trap (∆N ot ) generated under this degradation as well as mobility degradation (∆μ eff […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team NBTI On-the-fly methods Interface trap Oxide trap Mobility degradation
Abstract; In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap (Nbt) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Border-trap, charge pumping, Vertical distribution
Abstract; This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degradation is less important when the magnetic field is applied. The dynamic of the degradation change and […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic field, NBTI, VDMOSFET
Abstract; In this paper, we model the geometric component in a charge pumping (CP) technique of polycrystalline silicon thin-film transistors (poly-Si TFTs). This model is based on both remaining carrier types when the device transits from accumulation to inversion and vice versa. Therefore, it depends on gate length (L) and width (W) as well as […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Logic gates, MOSFET, Thin film transistors
Abstract; In this paper, we model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have established an analytic equation for charge-pumping current. This equation seems to be a universal one since it is in agreement with CP experimental data of different technologies devices. Instead of the classical considerations regarding […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Logic gates, Mathematical model, MOSFET
Abstract; We have experimentally analyzed negative bias temperature instability (NBTI) stress/recovery cycle on n-channel metal oxide semiconductor field effect transistors (n-MOSFET’s). Data obtained by current–voltage (I–V) and charge pumping (CP) techniques have revealed a turn-around phenomenon in both threshold voltage shift (ΔVth) and maximum CP current shift (ΔICP-Max). This allows us to separate the evolution of interface […]
October 16, 2019 Rachid SIKADOUR 2016, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping, NBTI n-MOSFETs, Turn-around phenomenon
Abstract; In this paper, an experimental analysis of the impact of dynamic negative bias temperature instability (NBTI) stress on the CMOS inverter dc response and temporal performance is presented. We analyzed the circuit behavior subjected to ac NBTI in the prospect to correlate the induced degradation with that seen at PMOS device level. The results […]
October 16, 2019 Rachid SIKADOUR 2016, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team CMOS integrated circuits, Inverters, Stress
Abstract; In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface (ANit) and oxide trap (ANot) induced by NBTI stress are reduced by […]
October 15, 2019 Rachid SIKADOUR 2017, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic fields, Negative bias temperature instability, Stress
French
English
Arabic