On the Permanent Component profiling of the Negative Bias Temperature Instability in p-MOSFET Devices

Abstract; In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap (Nbt) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI […]

October 16, 2019 Rachid SIKADOUR , , , ,