Abstract; By extracting and eliminating the geometric component from the charge pumping current (ICP) in on-the-fly oxide trap method (OTFOT), we have been able to demonstrate that both interface (ΔNit) and deep hole oxide traps (ΔNotD) induced by the negative bias temperature instability (NBTI) are principally located in the lightly doped drain region (LDD region) […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping current, LDD region, OTFOT
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