Abstract; In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap (Nbt) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Border-trap, charge pumping, Vertical distribution
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Abstract; We have experimentally analyzed negative bias temperature instability (NBTI) stress/recovery cycle on n-channel metal oxide semiconductor field effect transistors (n-MOSFET’s). Data obtained by current–voltage (I–V) and charge pumping (CP) techniques have revealed a turn-around phenomenon in both threshold voltage shift (ΔVth) and maximum CP current shift (ΔICP-Max). This allows us to separate the evolution of interface […]
October 16, 2019 Rachid SIKADOUR 2016, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping, NBTI n-MOSFETs, Turn-around phenomenon
Abstract; This paper presents a new attempt to more understand negative bias temperature instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally investigated on both p-substrate MOS (nMOS-capacitor) and nMOS transistors under accumulation condition, and new findings have been revealed. Indeed, nMOS-capacitor’s flat band shift (VFB) under NBTI stress has disclosed that time […]
October 15, 2019 Rachid SIKADOUR 2018, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping, interface-trap, nMOS-capacitor
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