Abstract; Combining simultaneously on the fly interface-trap (OTFIT) and the reverse voltage variation of source and drain (S/D) during measurement phase of measure/stress/measure (MSM) sequences, we have been able to scan the negative bias temperature instability (NBTI) across the channel length of PMOS transistors. In addition, we have analyzed the generation and evolution of interface-trap […]
October 16, 2019 Rachid SIKADOUR 2013, Microelectronic & Nanotechnologie Division, Team CDS Charge-pumpingInterface-trap, Lateral distribution, NBTI stress
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