Small- and large-signal performance up to 175°C of low-cost porous silicon substrate for RF applications

Abstract; This paper focuses on the comparison of the RF performances of various advanced trap-rich (TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are produced by electroporisification starting either from cheap standard resistivity (10 Q·cm) silicon (PSi-S) or from the most widespread highly doped milliohm-centimeter Si wafers (PSi-M). Through small-signal RF measurements, […]

October 15, 2019 Rachid SIKADOUR , , , ,