Prediction of RF Performances of Advanced MOS Transistors from DC and Low Frequency Measurements,

Abstract; This work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances (Rg, Rs, Rd), the intrinsic conductances (gm, gd), and the input capacitance Cgg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, […]

October 15, 2019 Rachid SIKADOUR , , , ,