Abstract; Small signal RF modeling of FinFETs is strongly dependent on the methodology used to extract transistor intrinsic and extrinsic parameters. In this article, an original extraction method is proposed for determining all FinFET extrinsic series elements values from S‐parameters measurements at zero bias condition. The extracted technique is demonstrated through successful comparison between simulated […]
October 16, 2019 Rachid SIKADOUR 2014, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division extraction method, FinFET, modeling
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Abstract; This work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances (Rg, Rs, Rd), the intrinsic conductances (gm, gd), and the input capacitance Cgg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division equivalent circui, extraction method, toff frequency
Abstract; To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division extraction method, GaN HEMT, small‐signal modeling
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