An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices

Abstract; To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent […]

October 15, 2019 Rachid SIKADOUR , , , ,