Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field

Abstract; In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface (ANit) and oxide trap (ANot) induced by NBTI stress are reduced by […]

October 15, 2019 Rachid SIKADOUR , , , ,