Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOS Devices

Abstract; In this paper, we model the geometric component of a charge-pumping (CP) technique. Base on this proposed model, we have established an analytic equation for charge-pumping current. This equation seems to be a universal one since it is in agreement with CP experimental data of different technologies devices. Instead of the classical considerations regarding […]

October 16, 2019 Rachid SIKADOUR , , , ,