On the Turn-around Phenomenon in N-MOS Transistors under NBTI Conditions

Abstract; We have experimentally analyzed negative bias temperature instability (NBTI) stress/recovery cycle on n-channel metal oxide semiconductor field effect transistors (n-MOSFET’s). Data obtained by current–voltage (I–V) and charge pumping (CP) techniques have revealed a turn-around phenomenon in both threshold voltage shift (ΔVth) and maximum CP current shift (ΔICP-Max). This allows us to separate the evolution of interface […]

October 16, 2019 Rachid SIKADOUR , , , ,