Abstract; We have experimentally analyzed negative bias temperature instability (NBTI) stress/recovery cycle on n-channel metal oxide semiconductor field effect transistors (n-MOSFET’s). Data obtained by current–voltage (I–V) and charge pumping (CP) techniques have revealed a turn-around phenomenon in both threshold voltage shift (ΔVth) and maximum CP current shift (ΔICP-Max). This allows us to separate the evolution of interface […]
October 16, 2019 Rachid SIKADOUR 2016, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping, NBTI n-MOSFETs, Turn-around phenomenon
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