An Accurate Combination of on-the-fly Interface Trapand Threshold Voltage Methods for NBTI Degradation Extraction

Abstract; The Negative bias temperature instability (NBTI) is one of the most important reliability issues for modern CMOS technology. Accurate reliability prediction necessitates physically based models for NBTI and accurate methods for estimation of interface (∆N it ) and oxide trap (∆N ot ) generated under this degradation as well as mobility degradation (∆μ eff […]

October 16, 2019 Rachid SIKADOUR , ,