Abstract; The Negative bias temperature instability (NBTI) is one of the most important reliability issues for modern CMOS technology. Accurate reliability prediction necessitates physically based models for NBTI and accurate methods for estimation of interface (∆N it ) and oxide trap (∆N ot ) generated under this degradation as well as mobility degradation (∆μ eff […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team NBTI On-the-fly methods Interface trap Oxide trap Mobility degradation
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