A Propagation Concept of Negative Bias Temperature Instability along the Channel Length in p-Type Metal Oxide Field Effect Transistor

Abstract; Combining simultaneously on the fly interface-trap (OTFIT) and the reverse voltage variation of source and drain (S/D) during measurement phase of measure/stress/measure (MSM) sequences, we have been able to scan the negative bias temperature instability (NBTI) across the channel length of PMOS transistors. In addition, we have analyzed the generation and evolution of interface-trap […]

October 16, 2019 Rachid SIKADOUR , , , ,