Abstract; An experimental method is proposed to determine and remove the geometric component in charge pumping (CP) measurements. This method uses CP-current data of different gate length transistors (LG) with fixed gate width (WG) to obtain an empirical model for the remaining carriers in MOSFET channel after the switch off. This allows to investigate the […]
October 16, 2019 Rachid SIKADOUR 2013, Microelectronic & Nanotechnologie Division, Team CDS CP-current, geometric component, NBTI
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Abstract; This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degradation is less important when the magnetic field is applied. The dynamic of the degradation change and […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic field, NBTI, VDMOSFET
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