Abstract; In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface (ANit) and oxide trap (ANot) induced by NBTI stress are reduced by […]
October 15, 2019 Rachid SIKADOUR 2017, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic fields, Negative bias temperature instability, Stress
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