Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs

Abstract; This paper presents a new attempt to more understand negative bias temperature instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally investigated on both p-substrate MOS (nMOS-capacitor) and nMOS transistors under accumulation condition, and new findings have been revealed. Indeed, nMOS-capacitor’s flat band shift (VFB) under NBTI stress has disclosed that time […]

October 15, 2019 Rachid SIKADOUR , , , ,