Abstract; This paper presents a new attempt to more understand negative bias temperature instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally investigated on both p-substrate MOS (nMOS-capacitor) and nMOS transistors under accumulation condition, and new findings have been revealed. Indeed, nMOS-capacitor’s flat band shift (VFB) under NBTI stress has disclosed that time […]
October 15, 2019 Rachid SIKADOUR 2018, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping, interface-trap, nMOS-capacitor
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