Abstract; To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division extraction method, GaN HEMT, small‐signal modeling
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