Abstract; In this paper, an experimental analysis of the impact of dynamic negative bias temperature instability (NBTI) stress on the CMOS inverter dc response and temporal performance is presented. We analyzed the circuit behavior subjected to ac NBTI in the prospect to correlate the induced degradation with that seen at PMOS device level. The results […]
October 16, 2019 Rachid SIKADOUR 2016, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team CMOS integrated circuits, Inverters, Stress
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Abstract; In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B <; 10 mT) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both interface (ANit) and oxide trap (ANot) induced by NBTI stress are reduced by […]
October 15, 2019 Rachid SIKADOUR 2017, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic fields, Negative bias temperature instability, Stress
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