Abstract; In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap (Nbt) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Border-trap, charge pumping, Vertical distribution
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