{"id":7698,"date":"2019-09-22T12:54:52","date_gmt":"2019-09-22T12:54:52","guid":{"rendered":"http:\/\/10.1.5.53\/?page_id=7698"},"modified":"2019-11-17T12:44:44","modified_gmt":"2019-11-17T12:44:44","slug":"diffusion-area","status":"publish","type":"page","link":"https:\/\/www.cdta.dz\/en\/research-and-technology\/technology-platforms\/micro-fabrication-plateform\/process-section\/diffusion-area\/","title":{"rendered":"Diffusion area"},"content":{"rendered":"<h1><span style=\"color: #1e73be\">Diffusion area<\/span><\/h1>\n<p>The diffusion area includes three horizontal furnaces for atmospheric pressure and low-pressure processes such as oxidation, diffusion, annealing, silicon nitride deposition, poly-Si deposition and TEOS, and BPSG deposition. These operations require utility systems to ensure proper operation of the furnaces such as the installation of the gas management system, vacuum system and extraction system (Exhaust).<\/p>\n<h4><span style=\"color: #1e73be\">Possible services in the Diffusion area:<\/span><\/h4>\n<ul>\n<li>Oxidation (Dry and wet)<\/li>\n<li>Annealing in temperature ranging from 350 to 900C\u00b0.<\/li>\n<li>High-temperature annealing 1150 C\u00b0<\/li>\n<li>LPCVD deposition of Poly-Silicon, Silicon nitride, TEOS and BPSG)<\/li>\n<li>CVD Deposition of POCL3 (Doping Poly-Silicon)<\/li>\n<\/ul>\n<h4><span style=\"color: #1e73be\">Heat treatment and high-temperature annealing<\/span><\/h4>\n<p>Heat treatment operations on silicon substrates are carried out in furnaces that allow:<\/p>\n<ul>\n<li>The growth of silicon dioxide (SiO2)<\/li>\n<li>Diffusion of dopants in silicon (Well drive or Drive in)<\/li>\n<li>Heating and redistribution<\/li>\n<\/ul>\n<p>All these operations are carried out on an atmospheric process, in the presence of nitrogen (N2) flow.<\/p>\n<h4><span style=\"color: #1e73be\">Oxidation (Dry and wet)<\/span><\/h4>\n<p>Silicon oxide growth is obtained by the reaction of oxidizing species on the surface of silicon (O2 or H2) at high temperatures (800\u00b0C to 960\u00b0C) and at atmospheric pressure.<br \/>\nThe table below shows the different types of oxides produced at the technology center:<\/p>\n<table class=\"spip\" border=\"2\" cellspacing=\"1\" cellpadding=\"1\">\n<tbody>\n<tr>\n<td>Process<\/td>\n<td>Layers<\/td>\n<td>Thickness<\/td>\n<\/tr>\n<tr>\n<td>Wet Oxidation<\/td>\n<td>Thick<\/td>\n<td>(0.1-0.8 \u03bcm)<\/td>\n<\/tr>\n<tr>\n<td>Dry Oxidation<\/td>\n<td>Thin<\/td>\n<td>(10-25 nm)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<h4><span style=\"color: #1e73be\">LPCVD depots\u00a0<\/span><\/h4>\n<p>The table below shows the steps of the process performed in the diffusion area. The mentioned thicknesses are recommended for an optimized process.<\/p>\n<table class=\"spip\" border=\"2\" cellspacing=\"1\" cellpadding=\"1\">\n<tbody>\n<tr>\n<td>Process<\/td>\n<td>Thickness<\/td>\n<\/tr>\n<tr>\n<td>LPCVD nitride<\/td>\n<td>(150-300nm)<\/td>\n<\/tr>\n<tr>\n<td>LPCVD TEOS<\/td>\n<td>(30- 100- 300 nm)<\/td>\n<\/tr>\n<tr>\n<td>LPCVD BPSG<\/td>\n<td>(700nm)<\/td>\n<\/tr>\n<tr>\n<td>Poly-Silicon<\/td>\n<td>(300-500nm)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Diffusion area The diffusion area includes three horizontal furnaces for atmospheric pressure and low-pressure processes such as oxidation, diffusion, annealing, silicon nitride deposition, poly-Si deposition and TEOS, and BPSG deposition. These operations require utility systems to ensure proper operation of the furnaces such as the installation of the gas management system, vacuum system and extraction [&hellip;]<\/p>\n","protected":false},"author":46,"featured_media":2448,"parent":7694,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"division-page.php","meta":{"footnotes":""},"class_list":["post-7698","page","type-page","status-publish","has-post-thumbnail","hentry"],"_links":{"self":[{"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/pages\/7698\/"}],"collection":[{"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/pages\/"}],"about":[{"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/types\/page\/"}],"author":[{"embeddable":true,"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/users\/46\/"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/comments\/?post=7698"}],"version-history":[{"count":0,"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/pages\/7698\/revisions\/"}],"up":[{"embeddable":true,"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/pages\/7694\/"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/media\/2448\/"}],"wp:attachment":[{"href":"https:\/\/www.cdta.dz\/en\/wp-json\/wp\/v2\/media\/?parent=7698"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}