Efficient RF extrinsic parameters extraction technique for FinFets


Small signal RF modeling of FinFETs is strongly dependent on the methodology used to extract transistor intrinsic and extrinsic parameters. In this article, an original extraction method is proposed for determining all FinFET extrinsic series elements values from S‐parameters measurements at zero bias condition. The extracted technique is demonstrated through successful comparison between simulated and measured S‐parameters over a widefrequency range.