Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique


By extracting and eliminating the geometric component from the charge pumping current (ICP) in on-the-fly oxide trap method (OTFOT), we have been able to demonstrate that both interface (ΔNit) and deep hole oxide traps (ΔNotD) induced by the negative bias temperature instability (NBTI) are principally located in the lightly doped drain region (LDD region) and they do not show any noticeable increase with stress time in the effective channel region. However, we have shown that the shallow hole oxide traps (ΔNotS) induced by NBTI are created in the whole of the channel.