Abstract; To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division extraction method, GaN HEMT, small‐signal modeling
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Abstract; In this paper, a set of ultra-compact CMOS bandpass filters are proposed for ultra-wideband (UWB) applications. For this aim, a comparative study was first performed enabling to deduce that Chebyshev-inverse and Hourglass filtering functions can be the most suitable for UWB operation. The impact of the latter functions on the easiness of implementation in […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division band-pass filters, Chebyshev filters, integrated circuit design
Abstract; This study presents a new design of compact transimpedance amplifier (TIA) for optical communication applications. By adopting the regulated common gate (RCG) topology, the proposed amplifier is designed and synthesised based on a thirdorder elliptic filter approach. Implemented in 0.13 μm complementary metal oxide semiconductor technology, the post layout simulation results provide 50 dB […]
October 15, 2019 Rachid SIKADOUR 2018, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division CMOS analogue integrated circuits, integrated circuit layout, telecommunication network topology
Abstract; This paper presents a new attempt to more understand negative bias temperature instability (NBTI) stress in semiconductor devices. NBTI impact has been experimentally investigated on both p-substrate MOS (nMOS-capacitor) and nMOS transistors under accumulation condition, and new findings have been revealed. Indeed, nMOS-capacitor’s flat band shift (VFB) under NBTI stress has disclosed that time […]
October 15, 2019 Rachid SIKADOUR 2018, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping, interface-trap, nMOS-capacitor
Abstract; In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode […]
October 15, 2019 Rachid SIKADOUR 2018, Micro-Electro-Mechanical Systems and Sensors Team, Microelectronic & Nanotechnologie Division Electro-mechanical systems, Sensors and actuators, Vibration control
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