Abstract; An ultra low power and low voltage down conversion mixer is presented in this paper for the frequency band of 1.8–2.4 GHz. Designed in 0.18μm CMOS technology, the double balanced proposed mixer is composed by two cascaded stages. The first one is based on cross coupled capacitors technique in current reused topology providing a high voltage gain, […]
October 16, 2019 Rachid SIKADOUR 2014, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division MixerLow power, Multistandards, Switched transconductance
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Abstract; Small signal RF modeling of FinFETs is strongly dependent on the methodology used to extract transistor intrinsic and extrinsic parameters. In this article, an original extraction method is proposed for determining all FinFET extrinsic series elements values from S‐parameters measurements at zero bias condition. The extracted technique is demonstrated through successful comparison between simulated […]
October 16, 2019 Rachid SIKADOUR 2014, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division extraction method, FinFET, modeling
Abstract; The design of an interface to a specific sensor induces costs and design time mainly related to the analog part. So to reduce these costs, it should have been standardized like digital electronics. The aim of the present work is the elaboration of a method based on multiobjectives genetic algorithms (MOGAs) to allow automated […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team
Abstract; By extracting and eliminating the geometric component from the charge pumping current (ICP) in on-the-fly oxide trap method (OTFOT), we have been able to demonstrate that both interface (ΔNit) and deep hole oxide traps (ΔNotD) induced by the negative bias temperature instability (NBTI) are principally located in the lightly doped drain region (LDD region) […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team charge pumping current, LDD region, OTFOT
Abstract; The Negative bias temperature instability (NBTI) is one of the most important reliability issues for modern CMOS technology. Accurate reliability prediction necessitates physically based models for NBTI and accurate methods for estimation of interface (∆N it ) and oxide trap (∆N ot ) generated under this degradation as well as mobility degradation (∆μ eff […]
October 16, 2019 Rachid SIKADOUR 2014, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team NBTI On-the-fly methods Interface trap Oxide trap Mobility degradation
Abstract; Piezoelectric properties of ZnO thin films have been investigated for micro-electro-mechanical systems (MEMS). Wurtzite ZnO structure was prepared on different substrates (Si (1 0 0), Pt (1 1 1)/Ti/SiO2/Si and Al (1 1 1)/SiO2/Si) at different substrate temperatures (from 100 to 500 °C) by a pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis […]
October 16, 2019 Rachid SIKADOUR 2014, Micro-Electro-Mechanical Systems and Sensors Team, Microelectronic & Nanotechnologie Division Bulk acoustic waves (BAW), Pulsed laser deposition (PLD), Thin films Piezoelectricity
Abstract; In this letter, a new design method of ultra wideband bandpass filter (UWB BPF) is proposed. Based on a symmetrical structure of a simple uniform line loaded by a stepped-impedance open stub (SIS) connected at its center, the proposed design method employs simultaneously the optimization of a defined objective function in the range of […]
October 16, 2019 Rachid SIKADOUR 2015, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division Bandpass filter (BPF), compact, stepped-impedance stub
Abstract; A new approach is proposed to act as an efficient design technique for the implementation of ultra-wideband (UWB) bandpass filters in integrated passive device technology. The proposed design is based on two major original contributions. First, the use of hourglass filter theory which, to the best of authors knowledge, has not been applied yet […]
October 16, 2019 Rachid SIKADOUR 2015, Analog / Radio Frequency Integrated Circuits Team, Microelectronic & Nanotechnologie Division band-pass filters, CMOS integrated circuits, ultra wideband technology
Abstract; In this manuscript, we have investigated the negative bias temperature instability (NBTI) induced border-trap (Nbt) depth in the interfacial oxide region of PMOS transistors using multi-frequency charge pumping (MFCP) method. We emphasize on the distribution of the permanent component in the oxide near the interface, giving a clear insight on its effect on NBTI […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Border-trap, charge pumping, Vertical distribution
Abstract; This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degradation is less important when the magnetic field is applied. The dynamic of the degradation change and […]
October 16, 2019 Rachid SIKADOUR 2015, Microelectronic & Nanotechnologie Division, Reliability of Semiconductor Components Team Magnetic field, NBTI, VDMOSFET
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